Laser-induced damage of Ta2O5/SiO2 narrow-band interference filters under different 1064 nm Nd:YAG laser modes

The laser-induced damage (LID) behavior of narrow-band interference filters was investigated with a Nd:YAG laser at 1064 nm under single-pulse mode and free-running mode. The absorption measurement of such coatings was performed with surface thermal lensing (STL) technique. The damage morphologies under the two different laser modes were also studied in detail. It was found that all the filters exhibited a pass-band-center-dependent absorption and laser-induced damage threshold (LIDT) behavior, but the damage morphologies were diverse. The explanation was given with the analysis of the electric field distribution and the operational behavior of the irradiation laser.     

Ultraviolet Luminescence in Mg0.12Zn0.88O Alloy Films

We investigate the origin of ultraviolet （UV） emission from Mg0.12 Zn0.88 O alloy thin films with a wurtzite structure fabricated on c-plane Al2O3 substrates by plasma assisted molecular beam epitaxy. At room temperature, the absorption edge and UV emission band of the Mg0.12Zn0.88O film shift to high-energy side compared with ZnO films. Temperature dependence of the photoluminescence spectra shows that the UV emission is composed of free exciton and neutral donor bound exciton emissions. Two-step dissociation processes of the UV emission are observed with the increasing temperature. The thermal quenching mechanism is attributed to the dissociation of the free exciton from the neutral donor bound exciton in the low temperature region and the dissociation of free electron and hole from the free exciton in the high temperature region.     

电致发光色纯性增强的硅基有机微腔

报道了硅基有机微腔的电致发光（EL）.该微腔由上半透明金属膜、中心有源多层膜和多孔硅分布Bragg反射镜（PS DBR）组成.半透明金属膜由Ag（２０nm）构成，充当发光器件的负电极和微腔的上反射镜.有源多层膜由Al (1 nm) / LiF(05 nm) /Alq3/Alq3:DCJTB/NPB/CuPc/ITO/SiO2组成，其中的Al/LiF为电子注入层，ITO为正电极，SiO2为使正、负电极电隔离的介质层.该PS DBR是采用设备简单、成本低廉且非常省时的电化学腐蚀法用单晶Si来制备的；该PS 关键词： 电化学腐蚀 电致发光 窄峰发射 硅基有机微腔     

Performance of various activators in ethylene polymerization based on an iron(II) catalyst system

Ethylisobutylaluminoxane (EBAO) and its analogues were synthesized by a reaction between an triethylaluminum (Et₃Al)/triisobutylaluminum (i‐Bu₃Al) mixture and 4‐fluorobenzeneboronic acid, phenylboronic acid, or n‐butaneboronic acid and subsequent hydrolysis with water. They were used as cocatalysts in ethylene polymerization catalyzed by an iron complex {[(ArN?C(Me))₂C₅H₃N]FeCl₂, where Ar is 2,6‐diisopropylphenyl}. Polyethylene with a high molecular weight and a narrow molecular weight distribution was prepared with modified EBAOs, and the performance of the iron complex at high polymerization temperatures was greatly improved. The activators for the iron complex also affected the polymerization activity and the molecular weight of the resultant polyethylene. It was suggested that the stereo and electronic effects of the substitute groups of aluminoxane contributed to the improved performance of the new activators. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 1093–1099, 2004     

Time-resolved chemiluminescence technique for the microdetermination of proteins based on their complexation with copper(II).

Based on the complexation between proteins and Cu(II) coupled with the time-resolved chemiluminescence (CL) technique, a highly sensitive and quantitative assay for measuring proteins in solution is described. The complexes of proteins with Cu(II) have a strongly catalytic effect on the luminol-H2O2 CL reaction. Because the CL emission produced by the complexes is much more long-lived than that by Cu(II), the CL signals originating from proteins can be easily identified and measured with a time-resolved technique. On this basis, bovine albumin fraction V (BAF V) can be quantitatively determined in the range of 0.01 - 5.0 microg/ml with a detection limit of 5.8 ng/ml. The results show that the proposed assay exhibits a small variation in the response values for the same amount of different proteins, as compared to the Lowry as well as Bradford assays. The CL assay has also been studied for the detection of immobilized proteins.     

光纤光栅选频掺Yb3+双包层光纤激光器

利用相位掩模法 ,在D形内包层掺Yb3 双包层光纤一端直接写制出Bragg光栅 ,用作双包层光纤激光器的输出腔镜 .试验得到了线宽为 0 196nm ,波长为 10 5 8 2nm ,最高输出功率为 5 70mW的稳定激光输出 ,解决了激光器中模式竞争造成的输出不稳定现象 .从速率方程出发 ,对激光器的输出功率与抽运功率、光栅反射率的关系以及最佳光纤长度进行了理论分析 ,结果与实验符合很好     

Zn0.76Cd0.24Se/ZnSe多量子阱的共振喇曼光谱

本文报道了在Zn0.76Cd0.24Se/ZnSe多量子阱(MQWs)中,用不同的Ar+激光线激发,观察到了共振增强的喇曼散射。首次在室温和77K的条件下,用Ar+的457.9nm谱线激发,观察到分别来自ZnSe垒层和Zn0.76Cd0.24Se阱层的限制纵光学声子模(LO)的喇曼散射,并对上述不同的光学模的起因进行了分析。     

电子辐照诱发固态相变导致的氮化硼纳米结构生长

报道了N+离子轰击产生的氮化硼(BN)纳米结构,及在电子辐照时结构演化的高分辨透射电子显微镜的原位测定结果.应当强调的是,这种类富勒烯和发夹结构的演化,实际上是电子辐照诱发固态相变的发展,观察中发现的一些BN颗粒、卷曲物,可以被认为是类富勒烯等纳米结构形成的前体或早期阶段.提出了一种类富勒烯等结构的电子辐照动力学模型,并进行了讨论. 关键词： 氮化硼 电子辐照 透射电子显微镜 氮化硼纳米形成物     

氮化铝薄膜的光学性能

分别使用X衍射仪和紫外（190 nm～800 nm）分光光度仪,测量了用分子束外延法生长在SiC（001）基底面上的AIN薄膜的X衍射、透射谱和不同温度下的吸收谱.X衍射表明:实验所用的AIN薄膜在c-轴存在应变和应力，该应变和应力主要是由于AIN的晶格常量与基底SiC的晶格常量不匹配所致.透射谱表明:AIN薄膜的禁带宽度大约为6.2eV；而其对应的吸收谱在6.2eV处存在一个明显的台阶,此台阶被认为是AIN薄膜中的带边自由激子吸收所产生,忽略激子的结合能(与禁带宽度相比),则该值就对应为AIN的禁带宽度.而其对应的不同温度下（10 k～293 k）的吸收谱的谱线的形状和位置无明显的变化表明:温度对AIN薄膜的禁带宽度亦无明显的影响，这主要是由于在AIN薄膜中存在着应力所致.